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R6004ENX

R6004ENX
Le immagini sono solo di riferimento
Numero di parte
R6004ENX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
40 ns
Forward Transconductance - Min
1.5 s
Id - Continuous Drain Current
4 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
40 W
Product Type
MOSFET
Qg - Gate Charge
15 nC
Rds On - Drain-Source Resistance
900 mOhms
Rise Time
22 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
55 ns
Typical Turn-On Delay Time
22 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Ultime Recensioni

Scrivi il tuo dominio
packed pretty good, all is ok,-seller.
Goods came in two weeks. Well packed. Track number tracked
Fast shippng. Good quality. I recomend this seller.
Works. Recommend
the photo in comparison with cheap. Delivery fast
Di Più

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R6004ENX Notizie

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