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R6015ENZC8

R6015ENZC8
Le immagini sono solo di riferimento
Numero di parte
R6015ENZC8
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
45 ns
Forward Transconductance - Min
4 s
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PF-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
40 nC
Rds On - Drain-Source Resistance
260 mOhms
Rise Time
55 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
105 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Thanks for your feedback!
My package arrived wet, not know where occurs this fact, but working all right
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Works. Find the price of this product is very good
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