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SI1012X-T1-GE3

SI1012X-T1-GE3
Le immagini sono solo di riferimento
Numero di parte
SI1012X-T1-GE3
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
11 ns
Forward Transconductance - Min
1 s
Height
0.8 mm
Id - Continuous Drain Current
600 mA
Length
1.6 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
SC-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
275 mW
Product Type
MOSFET
Qg - Gate Charge
750 pC
Rds On - Drain-Source Resistance
700 mOhms
Rise Time
5 ns
Series
SI1
Technology
SI
Tradename
TrenchFET
Transistor Polarity
N-Channel
Transistor Type
1 N Channel
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
Vgs - Gate-Source Voltage
4.5 V
Vgs th - Gate-Source Threshold Voltage
450 mV
Width
0.85 mm

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Shipping a little 1 weeks, normal packing, the procedure is complete.
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The timer is running. 10 PCS. Packed properly.
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Parole chiave correlate per SI10

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  • SI1012X-T1-GE3 PDF
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