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R6050JNZ4C13

R6050JNZ4C13
Numero di parte
R6050JNZ4C13
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 600V 50A POWER MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
50 ns
Id - Continuous Drain Current
50 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247G-3
Packaging
Tube
Pd - Power Dissipation
615 W
Product Type
MOSFET
Qg - Gate Charge
120 nC
Rds On - Drain-Source Resistance
83 mOhms
Rise Time
35 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
120 ns
Typical Turn-On Delay Time
45 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
5 V

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Ultime Recensioni

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it is safe and sound all, thank you seller!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Long Service and Russia!
Good material. Great seller, efficient and insurance. Ok
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R6050JNZ4C13 Notizie

03/15/2023
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