R6006ANDTL

Le immagini sono solo di riferimento
Numero di parte
R6006ANDTL
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Forward Transconductance - Min
1.7 S
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
40 W
Product Type
MOSFET
Qg - Gate Charge
15 nC
Rds On - Drain-Source Resistance
900 mOhms
Rise Time
36 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
22 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Ultime Recensioni

Empresa muy seria , el envió llego como veis en las fotos de manera muy segura , todos los componentes son de gran calidad , aconsejo TNT frente a DHL como compa?ía para el envió .

it is safe and sound all, thank you seller!

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Perfectly.

Everything is excellent! recommend this seller!

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