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R6006JND3TL1

R6006JND3TL1
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Numero di parte
R6006JND3TL1
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 600V 6A POWER
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
27 ns
Id - Continuous Drain Current
6 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-252-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
86 W
Product Type
MOSFET
Qg - Gate Charge
15.5 nC
Rds On - Drain-Source Resistance
936 mOhms
Rise Time
14 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
16 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
5 V

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Ultime Recensioni

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goods very well received very good quality
all exactly and work. радиолюбителя useful set to, thank you)
Quickly came to CET, all in one package. Look at the rules
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Di Più

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