- Numero di parte
- R6025FNZ1C9
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET 10V Drive Nch MOSFET
R6025FNZ1C9
Le immagini sono solo di riferimento
specificazioni
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 72 ns
- Forward Transconductance - Min
- 9 S
- Id - Continuous Drain Current
- 25 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 446 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 85 nC
- Rds On - Drain-Source Resistance
- 140 mOhms
- Rise Time
- 115 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 150 ns
- Typical Turn-On Delay Time
- 57 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- 30 V
- Vgs th - Gate-Source Threshold Voltage
- 3 V
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Ultime Recensioni
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
fast delivery
Mike Ibarra
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
สิทธิศักดิ์ วันดี
Long Service and Russia!
Alex Yu
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R6025FNZ1C9 Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per R602
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