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R6012ANJTL

R6012ANJTL
Le immagini sono solo di riferimento
Numero di parte
R6012ANJTL
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET TRANS MOSFET NCH 600V 12A 3PIN
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
35 ns
Id - Continuous Drain Current
12 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
100 W
Product Type
MOSFET
Qg - Gate Charge
35 nC
Rds On - Drain-Source Resistance
320 mOhms
Rise Time
30 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Ultime Recensioni

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Takes 8 days to Japan. Good!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Find the price of this product is very good
The goods are OK, thank you dealers.
Looks good
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