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LN100LA-G

LN100LA-G
Le immagini sono solo di riferimento
Numero di parte
LN100LA-G
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 1200V Cascoded N-Channel MOSFET
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specificazioni

categorie
MOSFET
Configuration
Dual
Id - Continuous Drain Current
3 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
LGA-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
350 mW
Product Type
MOSFET
Rds On - Drain-Source Resistance
3 kOhms
Series
LN100
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Vds - Drain-Source Breakdown Voltage
600 V
Vgs th - Gate-Source Threshold Voltage
1.6 V

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Shipping a little 1 weeks, normal packing, the procedure is complete.
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Parole chiave correlate per LN10

  • LN100LA-G integrato
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