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LN60A01ES-LF-P

LN60A01ES-LF-P
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Numero di parte
LN60A01ES-LF-P
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 600V, 3 N-Channel FETs
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Triple
Id - Continuous Drain Current
0.08 A
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 20 C
Moisture Sensitive
Yes
Mounting Style
SMD/SMT
Number of Channels
3 Channel
Package / Case
SOIC-8
Pd - Power Dissipation
1.3 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
190 Ohms
Transistor Polarity
N-Channel
Transistor Type
3 N-Channel
Typical Turn-Off Delay Time
3000 ns
Typical Turn-On Delay Time
50 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
15 V
Vgs th - Gate-Source Threshold Voltage
0.8 V

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Ultime Recensioni

Scrivi il tuo dominio
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Decent quality, not минвелл certainly, but enough decent
Works. Recommend
Seems well have not tested
Di Più

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Parole chiave correlate per LN60

  • LN60A01ES-LF-P integrato
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  • LN60A01ES-LF-P Scheda tecnica PDF
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