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R6008ANX

R6008ANX
Le immagini sono solo di riferimento
Numero di parte
R6008ANX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Trans MOSFET N-CH 600V 8A
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specificazioni

categorie
MOSFET
Configuration
Single
Fall Time
35 ns
Forward Transconductance - Min
2.5 s
Id - Continuous Drain Current
8 A
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
50 W
Product Type
MOSFET
Qg - Gate Charge
21 nC
Rds On - Drain-Source Resistance
800 mOhms
Rise Time
25 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
60 ns
Typical Turn-On Delay Time
25 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V

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Ultime Recensioni

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Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Hello! Order received, very happy. Thank you very much!
Thank You all fine, packed very well
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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