R6046FNZ1C9

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Numero di parte
R6046FNZ1C9
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
68 ns
Forward Transconductance - Min
15 s
Id - Continuous Drain Current
46 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
694 W
Product Type
MOSFET
Qg - Gate Charge
150 nC
Rds On - Drain-Source Resistance
75 mOhms
Rise Time
120 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
240 ns
Typical Turn-On Delay Time
73 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
3 V

Ultime Recensioni

Takes 8 days to Japan. Good!

Works. Find the price of this product is very good

Goods came in two weeks. Well packed. Track number tracked

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

Works. Recommend

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