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GA04JT17-247

GA04JT17-247
Le immagini sono solo di riferimento
Numero di parte
GA04JT17-247
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET SiC Supr Jnctn Trans 1700V-Rds 500mO-4A
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specificazioni

categorie
MOSFET
Configuration
Single
Fall Time
50 ns
Id - Continuous Drain Current
15 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
91 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
480 mOhms
Rise Time
28 ns
Series
GA04
Technology
SiC
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
73 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
1.7 kV

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Ultime Recensioni

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Teşekkürler
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Quick delivery. Secure packing. Excellent product. Thank you
packed pretty good, all is ok,-seller.
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Di Più

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GA04JT17-247 Notizie

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Parole chiave correlate per GA04

  • GA04JT17-247 integrato
  • GA04JT17-247 RoHS
  • GA04JT17-247 Scheda tecnica PDF
  • GA04JT17-247 Scheda dati
  • GA04JT17-247 Parte
  • GA04JT17-247 Acquistare
  • GA04JT17-247 Distributore
  • GA04JT17-247 PDF
  • GA04JT17-247 Componente
  • GA04JT17-247 circuiti integrati
  • GA04JT17-247 Scarica il pdf
  • GA04JT17-247 Scarica la scheda tecnica
  • GA04JT17-247 Fornitura
  • GA04JT17-247 Fornitore
  • GA04JT17-247 Prezzo
  • GA04JT17-247 Scheda dati
  • GA04JT17-247 Immagine
  • GA04JT17-247 Immagine
  • GA04JT17-247 Inventario
  • GA04JT17-247 Azione
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  • GA04JT17-247 Cheapest
  • GA04JT17-247 Eccellente
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  • GA04JT17-247 Dati tecnici

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