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R6025ANZC8

R6025ANZC8
Le immagini sono solo di riferimento
Numero di parte
R6025ANZC8
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
110 ns
Forward Transconductance - Min
14 S
Id - Continuous Drain Current
25 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PF-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
150 W
Product Type
MOSFET
Qg - Gate Charge
88 nC
Rds On - Drain-Source Resistance
120 mOhms
Rise Time
135 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
185 ns
Typical Turn-On Delay Time
50 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

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Ultime Recensioni

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Quick delivery. Secure packing. Excellent product. Thank you
it is safe and sound all, thank you seller!
packed pretty good, all is ok,-seller.
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Di Più

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