R6046ANZ1C9

Le immagini sono solo di riferimento
Numero di parte
R6046ANZ1C9
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
100 ns
Forward Transconductance - Min
19 S
Id - Continuous Drain Current
46 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
150 nC
Rds On - Drain-Source Resistance
69 mOhms
Rise Time
120 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
260 ns
Typical Turn-On Delay Time
65 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
2.5 V

Ultime Recensioni

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

fast delivery

Works. Recommend

Long Service and Russia!

Seems well have not tested

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