- Numero di parte
- IXA20I1200PB
- categorie
- IGBT Transistors
- RoHS
- Scheda dati
- Descrizione
- IGBT Transistors XPT IGBT
IXA20I1200PB
Le immagini sono solo di riferimento
specificazioni
- categorie
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 33 A
- Continuous Collector Current Ic Max
- 22 A
- Gate-Emitter Leakage Current
- 500 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 130 W
- Product Type
- IGBT Transistors
- Series
- IXA20I1200
- Technology
- SI
- Tradename
- XPT
- Unit Weight
Categoria di Porduct
Circuit Protection
157,625 Prodotti
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2,137,436 Prodotti
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278,174 Prodotti
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61,386 Prodotti
Test & Measurement
20,391 Prodotti
Ultime Recensioni
Takes 8 days to Japan. Good!
Alex Fragkos
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Works. Find the price of this product is very good
Maxim Krasnov
The goods are OK, thank you dealers.
CHARLES SANTOS
Looks good
Michael Beck
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Persone che visualizzano IXA20I1200PB quindi acquistato
IXA20I1200PB Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per IXA2
- IXA20I1200PB integrato
- IXA20I1200PB RoHS
- IXA20I1200PB Scheda tecnica PDF
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- IXA20I1200PB Distributore
- IXA20I1200PB PDF
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- IXA20I1200PB Scarica il pdf
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- IXA20I1200PB Fornitura
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- IXA20I1200PB Scheda dati
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- IXA20I1200PB Dati tecnici
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