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IXA20IF1200HB

IXA20IF1200HB
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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
38 A
Continuous Collector Current Ic Max
22 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
165 W
Product Type
IGBT Transistors
Series
IXA20IF1200
Technology
SI
Tradename
XPT
Unit Weight

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Ultime Recensioni

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Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
High Quality driver, works excellent. It came to Moscow for 7 days.
The timer is running. 10 PCS. Packed properly.
Great product. Arrived ahead of time. Thank you
Parcel received shook cool all 10 pieces is not checked check unsubscribe
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