- Numero di parte
- QH8KA1TCR
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET 30V Nch+Nch Si MOSFET
QH8KA1TCR
Le immagini sono solo di riferimento
specificazioni
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Dual
- Fall Time
- 3.5 ns, 3.5 ns
- Forward Transconductance - Min
- 1.7 S, 1.7 S
- Id - Continuous Drain Current
- 4.5 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 2.4 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 3 nC, 3 nC
- Rds On - Drain-Source Resistance
- 56 mOhms, 56 mOhms
- Rise Time
- 7.5 ns, 7.5 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 2 N-Channel
- Typical Turn-Off Delay Time
- 10 ns, 10 ns
- Typical Turn-On Delay Time
- 5 ns, 5 ns
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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Ultime Recensioni
Отличный продавец . Рекомендую.+++
Yuriy Iovlev
Teşekkürler
Ashir Hussain
it is safe and sound all, thank you seller!
Arturo Madril
packed pretty good, all is ok,-seller.
Julianah Yungkim
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
QH8KA1TCR Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per QH8K
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- QH8KA1TCR Scheda tecnica PDF
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