QH8K51TR

Le immagini sono solo di riferimento
Numero di parte
QH8K51TR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 100V NCH+NCH SMALL SIGNAL

specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
15 ns
Id - Continuous Drain Current
2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
4.7 nC
Rds On - Drain-Source Resistance
325 mOhms
Rise Time
10 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
30 ns
Typical Turn-On Delay Time
10 ns
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Ultime Recensioni

Takes 8 days to Japan. Good!

Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.

fast delivery

The goods are OK, thank you dealers.

Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!

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