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TP0620N3-G P003

TP0620N3-G P003
Le immagini sono solo di riferimento
Numero di parte
TP0620N3-G P003
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET P-CH Enhancmnt Mode MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Height
5.33 mm
Id - Continuous Drain Current
175 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
1 W
Product
MOSFET Small Signal
Product Type
MOSFET
Rds On - Drain-Source Resistance
15 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
200 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

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Ultime Recensioni

Scrivi il tuo dominio
it is safe and sound all, thank you seller!
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
fast delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
Works. Recommend
Di Più

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