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HN1B04FE-Y,LF

HN1B04FE-Y,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V, - 50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz, 80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B04
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight

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Ultime Recensioni

Scrivi il tuo dominio
fast delivery
Works. Recommend
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
Great product. Arrived ahead of time. Thank you
Di Più

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