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HN1C01FE-Y,LF

HN1C01FE-Y,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C01
Technology
SI
Transistor Polarity
NPN
Unit Weight

Categoria di Porduct

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Ultime Recensioni

Scrivi il tuo dominio
everything as it is written in the description of the same deductible prodovtsu deserved
packed pretty good, all is ok,-seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Everything is fine!
I received the product right, thank you very much 2018/12/03 ★★★★★
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