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HN1C01FU-GR,LF

HN1C01FU-GR,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400 at 2 mA
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C01
Technology
SI
Transistor Polarity
NPN
Unit Weight

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Thank you very much! Very fast shipping. High quality. Very good seller.
everything as it is written in the description of the same deductible prodovtsu deserved
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Goods came in two weeks. Well packed. Track number tracked
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
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