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HN1B04FE-GR,LF

HN1B04FE-GR,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
60 V, - 50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
100 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz, 80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-563-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1B04
Technology
SI
Transistor Polarity
NPN, PNP
Unit Weight

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Ultime Recensioni

Scrivi il tuo dominio
Received, Fast shipping, not checked yet
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Takes 8 days to Japan. Good!
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Goods came in two weeks. Well packed. Track number tracked
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