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TP0620N3-G

TP0620N3-G
Le immagini sono solo di riferimento
Numero di parte
TP0620N3-G
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 200V 12Ohm
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
16 ns
Height
5.33 mm
Id - Continuous Drain Current
175 mA
Length
5.21 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-92-3
Packaging
Bulk
Pd - Power Dissipation
1 W
Product Type
MOSFET
Rds On - Drain-Source Resistance
12 Ohms
Rise Time
15 ns
Technology
SI
Transistor Polarity
P-Channel
Transistor Type
1 P-Channel
Type
FET
Typical Turn-Off Delay Time
20 ns
Typical Turn-On Delay Time
10 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
200 V
Vgs - Gate-Source Voltage
20 V
Width
4.19 mm

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Ultime Recensioni

Scrivi il tuo dominio
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Works. Recommend
Long Service and Russia!
The timer is running. 10 PCS. Packed properly.
Di Più

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