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HN1C03FU-B(TE85L,F

HN1C03FU-B(TE85L,F
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
20 V
Collector-Emitter Saturation Voltage
42 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
1200
Emitter- Base Voltage VEBO
25 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
300 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
US-6
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C03
Technology
SI
Transistor Polarity
NPN

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Ultime Recensioni

Scrivi il tuo dominio
Shipping a little 1 weeks, normal packing, the procedure is complete.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
All very good. AND packed as you have everything in good condition.
No problem, with no contact, selectively checked a few pieces, such as running
to seller thank you! all like the photo. not tried operation. seller store recommend.
Di Più

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HN1C03FU-B(TE85L,F Notizie

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