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HN1A01F-GR(TE85L,F

HN1A01F-GR(TE85L,F
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
50 V
Collector-Emitter Saturation Voltage
0.1 V
Configuration
Dual
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
150 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SM-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1A01
Technology
SI
Transistor Polarity
PNP

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Ultime Recensioni

Scrivi il tuo dominio
everything as it is written in the description of the same deductible prodovtsu deserved
packed pretty good, all is ok,-seller.
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Everything is fine!
I received the product right, thank you very much 2018/12/03 ★★★★★
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HN1A01F-GR(TE85L,F Notizie

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