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HN1A01FE-GR,LF

HN1A01FE-GR,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 0.3 V
Continuous Collector Current
- 150 mA
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
80 MHz
Maximum DC Collector Current
- 150 mA
Mounting Style
SMD/SMT
Package / Case
ES6-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1A01
Technology
SI
Transistor Polarity
PNP

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Thanks for your feedback!
Quick delivery. Secure packing. Excellent product. Thank you
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Perfectly.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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