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HN1A01FE-Y,LF

HN1A01FE-Y,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 0.1 V
Continuous Collector Current
- 150 mA
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
80 MHz
Height
0.55 mm
Length
1.6 mm
Maximum DC Collector Current
- 150 mA
Mounting Style
SMD/SMT
Package / Case
ES6-6
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Pd - Power Dissipation
100 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1A01
Technology
SI
Transistor Polarity
PNP
Width
1.2 mm

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Ultime Recensioni

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goods very well received very good quality
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
The goods are OK, thank you dealers.
Works. Recommend
Di Più

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