Numero di parte HN1C01FU-Y,LF categorie Bipolar Transistors - BJT RoHS Scheda dati HN1C01FU-Y,LF Descrizione Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=50V, IC=0.15A, hFE=120 to 400 in SOT-26 (SM6) package
categorie Bipolar Transistors - BJT Collector- Base Voltage VCBO 60 V Collector- Emitter Voltage VCEO Max 50 V Collector-Emitter Saturation Voltage 0.1 V Configuration Dual DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current 150 mA Maximum Operating Temperature + 125 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case US-6 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 200 mW Product Type BJTs - Bipolar Transistors Series HN1C01 Technology SI Transistor Polarity NPN