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HN1C03FU-A(TE85L,F

HN1C03FU-A(TE85L,F
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
20 V
Collector-Emitter Saturation Voltage
0.042 V
Configuration
Single
Continuous Collector Current
300 mA
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
1200
Emitter- Base Voltage VEBO
20 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
300 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SMT-6
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C03
Technology
SI
Transistor Polarity
NPN

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goods very well received very good quality
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HN1C03FU-A(TE85L,F Notizie

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