IXA12IF1200HB

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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
20 A
Continuous Collector Current Ic Max
13 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-247-3
Packaging
Tube
Pd - Power Dissipation
85 W
Product Type
IGBT Transistors
Series
IXA12IF1200
Technology
SI
Tradename
XPT
Unit Weight

Ultime Recensioni

Properly packed, not damaged. Works well, voltage levels are stable. Recommend.

goods very well received very good quality

Hello! Order received, very happy. Thank you very much!

Thank You all fine, packed very well

High Quality driver, works excellent. It came to Moscow for 7 days.

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