- Numero di parte
- IXA17IF1200HJ
- categorie
- IGBT Transistors
- RoHS
- Scheda dati
- Descrizione
- IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBTs
IXA17IF1200HJ
Le immagini sono solo di riferimento
specificazioni
- categorie
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 28 A
- Continuous Collector Current Ic Max
- 18 A
- Gate-Emitter Leakage Current
- 500 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- ISOPLUS 247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 100 W
- Product Type
- IGBT Transistors
- Series
- IXA17IF1200
- Technology
- SI
- Tradename
- XPT
- Unit Weight
Categoria di Porduct
Circuit Protection
157,625 Prodotti
Connectors
2,137,436 Prodotti
Electromechanical
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Test & Measurement
20,391 Prodotti
Ultime Recensioni
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
Potrebbe piacerti anche
Persone che visualizzano IXA17IF1200HJ quindi acquistato
IXA17IF1200HJ Notizie
03/14/2023
03/13/2023
03/13/2023
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