- Numero di parte
- IXA12IF1200PB
- categorie
- IGBT Transistors
- RoHS
- Scheda dati
- Descrizione
- IGBT Transistors XPT 1200V IGBT GenX3 XPT IGBT
IXA12IF1200PB
Le immagini sono solo di riferimento
specificazioni
- categorie
- IGBT Transistors
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Configuration
- Single
- Continuous Collector Current at 25 C
- 20 A
- Continuous Collector Current Ic Max
- 13 A
- Gate-Emitter Leakage Current
- 500 nA
- Maximum Gate Emitter Voltage
- 20 V
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 85 W
- Product Type
- IGBT Transistors
- Series
- IXA12IF1200
- Technology
- SI
- Tradename
- XPT
- Unit Weight
Categoria di Porduct
Circuit Protection
157,625 Prodotti
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2,137,436 Prodotti
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Test & Measurement
20,391 Prodotti
Ultime Recensioni
Thanks for your feedback!
Anna Grden
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Brenda Gfeller
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Works. Find the price of this product is very good
Maxim Krasnov
Potrebbe piacerti anche
Persone che visualizzano IXA12IF1200PB quindi acquistato
IXA12IF1200PB Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per IXA1
- IXA12IF1200PB integrato
- IXA12IF1200PB RoHS
- IXA12IF1200PB Scheda tecnica PDF
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- IXA12IF1200PB PDF
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- IXA12IF1200PB circuiti integrati
- IXA12IF1200PB Scarica il pdf
- IXA12IF1200PB Scarica la scheda tecnica
- IXA12IF1200PB Fornitura
- IXA12IF1200PB Fornitore
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- IXA12IF1200PB Dati tecnici
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