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HN1C03F-B(TE85L,F)

HN1C03F-B(TE85L,F)
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
20 V
Collector-Emitter Saturation Voltage
42 mV
Configuration
Dual
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
1200
Emitter- Base Voltage VEBO
25 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
300 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SOT-26-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
300 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C03
Technology
SI
Transistor Polarity
NPN
Unit Weight

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Ultime Recensioni

Scrivi il tuo dominio
goods very well received very good quality
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Decent quality, not минвелл certainly, but enough decent
Shipping a little 1 weeks, normal packing, the procedure is complete.
Di Più

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HN1C03F-B(TE85L,F) Notizie

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