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IXA20RG1200DHG-TRR

IXA20RG1200DHG-TRR
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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
32 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
SMPD-9
Packaging
Reel
Pd - Power Dissipation
125 W
Product Type
IGBT Transistors
Series
ISOPLUS

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Takes 8 days to Japan. Good!
Yes, they are all here. :)
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipping a little 1 weeks, normal packing, the procedure is complete.
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IXA20RG1200DHG-TRR Notizie

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