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QH8KA2TCR

QH8KA2TCR
Le immagini sono solo di riferimento
Numero di parte
QH8KA2TCR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 30V Nch+Nch Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
5.7 ns, 5.7 ns
Forward Transconductance - Min
1.4 S, 1.4 S
Id - Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
8.4 nC, 8.4 nC
Rds On - Drain-Source Resistance
25 mOhms, 25 mOhms
Rise Time
8 ns, 8 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
12 ns, 12 ns
Typical Turn-On Delay Time
7.2 ns, 7.2 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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My package arrived wet, not know where occurs this fact, but working all right
all exactly and work. радиолюбителя useful set to, thank you)
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Works. Find the price of this product is very good
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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