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QH8KA4TCR

QH8KA4TCR
Le immagini sono solo di riferimento
Numero di parte
QH8KA4TCR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 30V Nch+Nch Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
20 ns, 20 ns
Forward Transconductance - Min
7 S, 7 S
Id - Continuous Drain Current
9 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
12 nC, 12 nC
Rds On - Drain-Source Resistance
12.5 mOhms
Rise Time
20 ns, 20 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
2 N-Channel
Typical Turn-Off Delay Time
50 ns, 50 ns
Typical Turn-On Delay Time
20 ns, 20 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
12 V
Vgs th - Gate-Source Threshold Voltage
500 mV

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Ultime Recensioni

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Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Yes, they are all here. :)
Perfectly.
High Quality driver, works excellent. It came to Moscow for 7 days.
Goods came in two weeks. Well packed. Track number tracked
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