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QH8MA3TCR

QH8MA3TCR
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Numero di parte
QH8MA3TCR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 30V N+P Ch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
5.7 ns, 20 ns
Forward Transconductance - Min
2.7 S, 3.3 S
Id - Continuous Drain Current
7 A, 5.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2.5 W
Product Type
MOSFET
Qg - Gate Charge
7.2 nC, 10 nC
Rds On - Drain-Source Resistance
22 mOhms, 37 mOhms
Rise Time
8 ns, 12 ns
Technology
SI
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
12 ns, 40 ns
Typical Turn-On Delay Time
7.2 ns, 8 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V, 2.5 V

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Works. Find the price of this product is very good
Goods came in two weeks. Well packed. Track number tracked
Seems well have not tested
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