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QH8MA2TCR

QH8MA2TCR
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Numero di parte
QH8MA2TCR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 30V Nch+Pch Power MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
5.7 ns, 8.5 ns
Forward Transconductance - Min
1.4 S, 1.9 S
Id - Continuous Drain Current
4.5 A, 3 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
-
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
8.4 nC, 7.8 nC
Rds On - Drain-Source Resistance
25 mOhms, 55 mOhms
Rise Time
8 ns, 16.8 ns
Technology
SI
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
12 ns, 27.6 ns
Typical Turn-On Delay Time
7.2 ns, 7.9 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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all exactly and work. радиолюбителя useful set to, thank you)
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Works. Recommend
Great product. Arrived ahead of time. Thank you
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
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