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QH8M22TCR

QH8M22TCR
Le immagini sono solo di riferimento
Numero di parte
QH8M22TCR
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 40V NCH+PCH MIDDLE POWER
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
2 ns, 10 ns
Id - Continuous Drain Current
4.5 A, 2.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
1.5 W
Product Type
MOSFET
Qg - Gate Charge
2.6 nC, 9.5 nC
Rds On - Drain-Source Resistance
46 mOhms
Rise Time
2.9 ns, 10 ns
Technology
SI
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
14.8 ns, 35 ns
Typical Turn-On Delay Time
3.9 ns, 8 ns
Vds - Drain-Source Breakdown Voltage
40 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
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Seems well have not tested
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