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HN1C03FU-B,LF

HN1C03FU-B,LF
Le immagini sono solo di riferimento
Numero di parte
HN1C03FU-B,LF
categorie
Bipolar Transistors - BJT
RoHS
Scheda dati
Descrizione
Bipolar Transistors - BJT NPN + NPN Ind. Transistor, VCEO=20V, IC=0.3A, hFE=350 to 1200 in SOT-26 (SM6) package
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
50 V
Collector- Emitter Voltage VCEO Max
20 V
Collector-Emitter Saturation Voltage
0.042 V
Configuration
Dual
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
1200
Emitter- Base Voltage VEBO
25 V
Gain Bandwidth Product fT
30 MHz
Maximum DC Collector Current
300 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
US-6
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1C03
Technology
SI
Transistor Polarity
NPN

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Ultime Recensioni

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My package arrived wet, not know where occurs this fact, but working all right
all exactly and work. радиолюбителя useful set to, thank you)
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
fast delivery
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