IXA27IF1200HJ

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specificazioni

categorie
IGBT Transistors
Collector- Emitter Voltage VCEO Max
1200 V
Collector-Emitter Saturation Voltage
1.8 V
Configuration
Single
Continuous Collector Current at 25 C
43 A
Continuous Collector Current Ic Max
27 A
Gate-Emitter Leakage Current
500 nA
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
ISOPLUS 247-3
Packaging
Tube
Pd - Power Dissipation
150 W
Product Type
IGBT Transistors
Series
IXA27IF1200HJ
Technology
SI
Tradename
XPT
Unit Weight

Ultime Recensioni

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Teşekkürler

Quickly came to CET, all in one package. Look at the rules

packed pretty good, all is ok,-seller.

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

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