- Numero di parte
- R6030ENZ1C9
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET 10V Drive Nch MOSFET
R6030ENZ1C9
Le immagini sono solo di riferimento
specificazioni
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 60 ns
- Forward Transconductance - Min
- 8 s
- Id - Continuous Drain Current
- 30 A
- Maximum Operating Temperature
- + 150 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Reel
- Packaging
- Cut Tape
- Part # Aliases
- Pd - Power Dissipation
- 120 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 85 nC
- Rds On - Drain-Source Resistance
- 115 mOhms
- Rise Time
- 55 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 190 ns
- Typical Turn-On Delay Time
- 40 ns
- Unit Weight
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Ultime Recensioni
Teşekkürler
Ashir Hussain
My package arrived wet, not know where occurs this fact, but working all right
Eddy Hustinx
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Works. Find the price of this product is very good
Maxim Krasnov
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
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Persone che visualizzano R6030ENZ1C9 quindi acquistato
R6030ENZ1C9 Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per R603
- R6030ENZ1C9 integrato
- R6030ENZ1C9 RoHS
- R6030ENZ1C9 Scheda tecnica PDF
- R6030ENZ1C9 Scheda dati
- R6030ENZ1C9 Parte
- R6030ENZ1C9 Acquistare
- R6030ENZ1C9 Distributore
- R6030ENZ1C9 PDF
- R6030ENZ1C9 Componente
- R6030ENZ1C9 circuiti integrati
- R6030ENZ1C9 Scarica il pdf
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- R6030ENZ1C9 Fornitura
- R6030ENZ1C9 Fornitore
- R6030ENZ1C9 Prezzo
- R6030ENZ1C9 Scheda dati
- R6030ENZ1C9 Immagine
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- R6030ENZ1C9 Dati tecnici
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