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R6030ENZC8

R6030ENZC8
Le immagini sono solo di riferimento
Numero di parte
R6030ENZC8
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
60 ns
Forward Transconductance - Min
8 s
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-3PF-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
120 W
Product Type
MOSFET
Qg - Gate Charge
85 nC
Rds On - Drain-Source Resistance
115 mOhms
Rise Time
55 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
190 ns
Typical Turn-On Delay Time
40 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V

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Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
The goods are OK, thank you dealers.
Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.
all is well. checked work. seller recommend.
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Parole chiave correlate per R603

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