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R6030ENX

R6030ENX
Le immagini sono solo di riferimento
Numero di parte
R6030ENX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET 10V Drive Nch MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
60 ns
Height
15.4 mm
Id - Continuous Drain Current
30 A
Length
10.3 mm
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Reel
Packaging
Cut Tape
Part # Aliases
Pd - Power Dissipation
86 W
Product Type
MOSFET
Qg - Gate Charge
85 nC
Rds On - Drain-Source Resistance
115 mOhms
Rise Time
55 ns
Series
Super Junction-MOS EN
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
190 ns
Typical Turn-On Delay Time
40 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
2 V
Width
4.8 mm

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Ultime Recensioni

Scrivi il tuo dominio
it is safe and sound all, thank you seller!
Everything is excellent! recommend this seller!
Works. Find the price of this product is very good
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!
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R6030ENX Notizie

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