- Numero di parte
- R6030ENZ4C13
- categorie
- MOSFET
- RoHS
- Scheda dati
- Descrizione
- MOSFET NCH 600V 30A POWER MOSFET
R6030ENZ4C13
Le immagini sono solo di riferimento
specificazioni
- categorie
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Single
- Fall Time
- 60 ns
- Id - Continuous Drain Current
- 30 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 305 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 85 nC
- Rds On - Drain-Source Resistance
- 130 mOhms
- Rise Time
- 55 ns
- Technology
- SI
- Transistor Polarity
- N-Channel
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 190 ns
- Typical Turn-On Delay Time
- 40 ns
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Ultime Recensioni
Takes 8 days to Japan. Good!
Alex Fragkos
Works. Find the price of this product is very good
Maxim Krasnov
Works. Recommend
Rajiv
Long Service and Russia!
Alex Yu
The timer is running. 10 PCS. Packed properly.
Karina Erdmann
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Persone che visualizzano R6030ENZ4C13 quindi acquistato
R6030ENZ4C13 Notizie
03/14/2023
03/13/2023
03/13/2023
Parole chiave correlate per R603
- R6030ENZ4C13 integrato
- R6030ENZ4C13 RoHS
- R6030ENZ4C13 Scheda tecnica PDF
- R6030ENZ4C13 Scheda dati
- R6030ENZ4C13 Parte
- R6030ENZ4C13 Acquistare
- R6030ENZ4C13 Distributore
- R6030ENZ4C13 PDF
- R6030ENZ4C13 Componente
- R6030ENZ4C13 circuiti integrati
- R6030ENZ4C13 Scarica il pdf
- R6030ENZ4C13 Scarica la scheda tecnica
- R6030ENZ4C13 Fornitura
- R6030ENZ4C13 Fornitore
- R6030ENZ4C13 Prezzo
- R6030ENZ4C13 Scheda dati
- R6030ENZ4C13 Immagine
- R6030ENZ4C13 Immagine
- R6030ENZ4C13 Inventario
- R6030ENZ4C13 Azione
- R6030ENZ4C13 Originale
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- R6030ENZ4C13 Dati tecnici
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