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HN1A01FU-Y,LF

HN1A01FU-Y,LF
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specificazioni

categorie
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 0.1 V
Continuous Collector Current
- 150 mA
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
400
Emitter- Base Voltage VEBO
- 5 V
Gain Bandwidth Product fT
80 MHz
Height
0.9 mm
Length
2 mm
Maximum DC Collector Current
- 150 mA
Mounting Style
SMD/SMT
Package / Case
US-6
Packaging
MouseReel
Packaging
Reel
Packaging
Cut Tape
Pd - Power Dissipation
200 mW
Product Type
BJTs - Bipolar Transistors
Series
HN1A01
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
1.25 mm

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Ultime Recensioni

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Hello! Order received, very happy. Thank you very much!
Everything is excellent! recommend this seller!
Decent quality, not минвелл certainly, but enough decent
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
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