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R6035KNZ1C9

R6035KNZ1C9
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Numero di parte
R6035KNZ1C9
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 35A Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
95 ns
Forward Transconductance - Min
11 S
Id - Continuous Drain Current
35 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Tube
Part # Aliases
Pd - Power Dissipation
379 W
Product Type
MOSFET
Qg - Gate Charge
72 nC
Rds On - Drain-Source Resistance
92 mOhms
Rise Time
150 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
90 ns
Typical Turn-On Delay Time
45 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Takes 8 days to Japan. Good!
Yes, they are all here. :)
Hello! Order received, very happy. Thank you very much!
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Shipping a little 1 weeks, normal packing, the procedure is complete.
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