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R6030JNZ4C13

R6030JNZ4C13
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Numero di parte
R6030JNZ4C13
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET NCH 600V 30A POWER
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
25 ns
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247G-3
Packaging
Tube
Pd - Power Dissipation
370 W
Product Type
MOSFET
Qg - Gate Charge
74 nC
Rds On - Drain-Source Resistance
143 mOhms
Rise Time
26 ns
Series
BM14270MUV-LB
Technology
SI
Tradename
PrestoMOS
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
70 ns
Typical Turn-On Delay Time
37 ns
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
30 V
Vgs th - Gate-Source Threshold Voltage
5 V

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Ultime Recensioni

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goods very well received very good quality
all exactly and work. радиолюбителя useful set to, thank you)
Quickly came to CET, all in one package. Look at the rules
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
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Parole chiave correlate per R603

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